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| Datasheet File OCR Text: |
| BUL58BSMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR * SEMEFAB DESIGNED AND DIFFUSED * HIGH VOLTAGE * FAST SWITCHING * HIGH ENERGY RATING 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) FEATURES 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. SMD1 PACKAGE Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter * Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Derate above 25C when used on efficient heatsink Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 180V 90V 10V 7A 10A 2A 50W 0.28W/C -65 to 200C Prelim. 7/00 BUL58BSMD ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE* DC Current Gain Test Conditions Min. 90 180 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 180V TC = 125C IB = 0 IC = 0 VEB = 9V IC = 0.3A IC = 3A IC = 5A IC = 1A TC = 125C VCE = 4V VCE = 4V VCE = 4V TC = 125C IB = 0.1A IB = 0.3A IB = 0.6A IB = 0.3A IB = 0.5A VCE = 4V f = 1MHz VCE = 80V V 10 100 100 10 100 mA mA mA 30 25 20 80 60 50 0.2 0.6 1.5 1.1 2.0 20 44 V V -- VCE(sat)* Collector - Emitter Saturation Voltage IC = 3A IC = 6A IC = 3A IC = 6A IC = 0.2A VCB = 20V VBE(sat)* Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
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